An iridescent film of porous anodic aluminum oxide with alternatingly electrodeposited Cu and SiO₂ nanoparticles

• Menglei Chang,
• Huawen Hu,
• Haiyan Quan,
• Hongyang Wei,
• Zhangyi Xiong,
• Jiacong Lu,
• Pin Luo,
• Yaoheng Liang,
• Jianzhen Ou and
• Dongchu Chen

Beilstein J. Nanotechnol. 2019, 10, 735–745, doi:10.3762/bjnano.10.73

• . Galvanic deposition of Cu NPs In a CuSO2 solution (60 g/L), the anodically oxidized sample was colorized using an electrical supply (EOECD-30A) with a constant voltage of 15 V for a deposition time of 35 s. During the electrodeposition process, the sample was kept parallel to the electrodes and at equal

• distances between them. The sample was taken out of the electrolyte and then blow-dried before storage for later use. Galvanic deposition of SiO2 NPs The sample with the electrodeposited Cu was put into a SiO2 deposition liquid, and the power supply (EOECD-30A) started with a constant voltage of 3 V for 35

• finally put into a sealed pocket for later use. The SiO2 deposition liquid was prepared by mechanically mixing potassium nitrate (10.11 g), DI water (500 mL), absolute ethyl alcohol (500 mL), adding tetraethoxysilane (50 mL) after the pH value was adjusted to 3. The flow chart for the stepwise galvanic

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

• Rachela G. Milazzo,
• Antonio M. Mio,
• Giuseppe D’Arrigo,
• Emanuele Smecca,
• Alessandra Alberti,
• Gabriele Fisichella,
• Filippo Giannazzo,
• Corrado Spinella and
• Emanuele Rimini

Beilstein J. Nanotechnol. 2017, 8, 183–189, doi:10.3762/bjnano.8.19

• nanoparticle arrays and to improve the conversion efficiency of hybrid photovoltaic devices. Keywords: electroless deposition; galvanic deposition; gold nanoparticles; HF acid treatment; HF-propelled motion; hydrogen termination; silicon surfaces; Introduction Gold nanoparticles on silicon substrates have

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• . The latter step, called galvanic deposition, is based on the spontaneous oxido-reduction reactions between the semiconductor surface (the substrate) and the metallic ions in the solution. Upon contact with the Si surface, the solution spontaneously reduces and precipitates into Au nanocrystals

• dioxide prevents further metal ion reduction. Since the gold salt reduction process is not possible on SiO2, the reaction immediately stops after the formation of SiO2 [30]. After the selective galvanic deposition of gold clusters on the substrate, the samples were loaded into the MBE chamber. The phase